BAW56S,115

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BAW56S,115 datasheet

• Маркировка
  BAW56S,115
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors BAW56S,115 Configuration: Double Dual Common Anode Current - Average Rectified (io) (per Diode): 250mA (DC) Current - Reverse Leakage @ Vr: 500nA @ 80V Diode Configuration: 2 Pair Series Connection Forward Continuous Current: 0.25 A Forward Voltage Drop: 1.25 V ID_COMPONENTS: 1942120 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Max Surge Current: 4 A Maximum Operating Temperature: + 150 C Maximum Reverse Leakage Current: 0.5 uA Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Operating Temperature Range: + 150 C Package / Case: SC-70-6, SC-88, SOT-363 Peak Reverse Voltage: 90 V Product: Switching Diodes Recovery Time: 4 ns Reverse Recovery Time (trr): 4ns Series: - Speed: Fast Recovery = 200mA (Io) Voltage - Dc Reverse (vr) (max): 90V Voltage - Forward (vf) (max) @ If: 1V @ 50mA Other Names: 934045730115::BAW56S T/R::BAW56S T/R
• Количество страниц
  15 шт.
• Форматы файла
  HTML, PDF

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